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- Next-Generation Power Semiconductor Device Engineer | Device Development for Next-Generation Power Semiconductor Devices
JOB ID 28013
Next-Generation Power Semiconductor Device Engineer | Device Development for Next-Generation Power Semiconductor Devices
- Manufacturer, Electrical & Electronic
- Semiconductor, Research & Development, Research & Development
- Aichi
- ¥5,500,000~¥14,300,000
In the automotive parts industry, it is one of the largest companies in Japan in the thermal systems, mobility systems, power train systems, electrification systems, and electronic systems businesses.
We are currently focusing on four areas [electrification, connected systems, advanced safety/automated driving, and non-vehicle businesses (FA/agriculture)].
You will be involved in the planning, development, and design of high-voltage, high-current power semiconductor devices (Si-IGBT, SiC-MOSFET, GaN-HEMT) for inverter systems for electric vehicles.
Job Description
-
- Responsibilities
- ■Product Planning/Specification Review
・Technical Needs Assessment
・Technology Trend Analysis
・Target Specification Adjustment and Design
■Device Development and Design
・Device Simulation
・Structural Analysis and Layout Design
・Prototype Evaluation, Analysis, and Yield Improvement
・Device Inspection, Evaluation, and Feedback to Device Development
-
- Requirements
- Candidates with experience or knowledge in semiconductor device design and development (approximate 3 years or more)
*Experience in power semiconductors is not required.
-
- Preferred
- ・Knowledge
of power semiconductors ・Experience as a project manager or project leader
-
- Location
- Aichi
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- Work Style
- Remote working possible, Flex working possible
-
- Salary
- ¥5,500,000~¥14,300,000
-
- Attractive
Points - Japanese company with global opportunities, Listed company, Childcare support system, Weekends and holidays off, Major corporation
- Attractive
Consultation
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